| PART |
Description |
Maker |
| HCF12 HGD25 3HGD5 |
0.7 A, 12000 V, SILICON, SIGNAL DIODE
SILICON, RECTIFIER DIODE
2.5 A, 5000 V, SILICON, RECTIFIER DIODE
|
|
| HY27SS08121M-FCP HY27SS08121M-FPCP |
64M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
64M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
|
Hynix Semiconductor, Inc.
|
| HY27SA081G1M-VPEB HY27SA081G1M-VPIP |
128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| DTS3165A230N3LG DTS3185A230N4SS DTS3185A115N4SS DT |
Climatiseur exterieur de 5000-12000 BTUH
|
Hammond Manufacturing Ltd.
Hammond Manufacturing L...
|
| LM1458IM |
DUAL OP-AMP, 12000 uV OFFSET-MAX, PDSO8
|
FAIRCHILD SEMICONDUCTOR CORP
|
| MLA-01122B |
1000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MICROWAVE TECHNOLOGY INC
|
| 3486H49 |
6000 MHz - 12000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.7 dB INSERTION LOSS-MAX
|
HERLEY NEW YORK
|
| AMF-6B-08001200-110-40P |
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
MITEQ INC
|
| HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
| PKS30A ASS-PKS |
Axial Auto Surge Suppressor Stand-off Voltage - 18 to 43 Volts 12000 Watt Peak Pulse Power
|
StarHope
|
| MC3358P1 MC3458 MC3458D MC3458P1 MC3358 ON1120 MC3 |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS
From old datasheet system
DUAL OP-AMP, 12000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
ECONOLINE: RSZ/P - 1kVDC
|
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
